Semiconductor module

ABSTRACT

The present invention provides a semiconductor module capable of improving a bandwidth between a logic chip and a RAM. According to the present invention, a semiconductor module  1  is provided with: a logic chip; a pair of RAM units  30  each composed of a lamination-type RAM module; a first interposer  10  electrically connected to the logic chip and to each of the pair of RAM units  30 ; and a connection unit  40  that communicatively connects the logic chip and each of the pair of RAM units  30 , wherein one RAM unit  30   a  is placed on the first interposer  10 , and has one end portion disposed so as to overlap, in the lamination direction C, one end portion of the logic chip with the connection unit  40  therebetween, and the other RAM unit  30   b  is disposed so as to overlap the one RAM unit  30   a  with the connection unit  40  therebetween, and is also disposed along the outer periphery of the logic chip.

TECHNICAL FIELD

The present invention relates to a semiconductor module.

BACKGROUND ART

In the related art, a volatile memory (RAM) such as a dynamic randomaccess memory (DRAM) is known as a storage device. DRAMs are required tohave high performance of an arithmetic unit (hereinafter referred to asa logic chip) and a large capacity capable of withstanding an increasein amount of data. Therefore, the capacity has been increased byminiaturizing a memory (memory cell array, memory chip) and increasingthe number of cells in a plane. On the other hand, this type of increasein capacity has reached its limit due to the weakness to noise caused bythe miniaturization, the increase in die area, and the like.

Therefore, in recent years, a technology has been developed thatrealizes a large capacity by laminating a plurality of planar memoriesto form a three-dimensional (3D) structure. In addition, there has beenproposed a semiconductor module that reduces an installation area of thelogic chip and the RAM by overlapping the logic chip and RAM (see, forexample, Patent Documents 1 to 4).

Patent Document 1: Japanese Unexamined Patent Application (Translationof PCT Application), Publication No. 2014-512691

Patent Document 2: Japanese Unexamined Patent Application (Translationof PCT Application), Publication No. 2013-501380

Patent Document 3: Japanese Unexamined Patent Application, PublicationNo. 2010-232659

Patent Document 4: Japanese Unexamined Patent Application, PublicationNo. 2010-80802

DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention

With the increase in performance of the logic chip and the increase inamount of data, an improvement in communication rate between the logicchip and the RAM is also required along with the increase in capacity.Therefore, it is preferable to provide a semiconductor module capable ofimproving a bandwidth between the logic chip and the RAM.

An object of the invention is to provide a semiconductor module capableof improving a bandwidth between a logic chip and a RAM.

Means for Solving the Problems

The invention relates to a semiconductor module including: a logic chip;a pair of RAM units, each of which is configured with a lamination-typeRAM module; a first interposer electrically connected to the logic chipand each of the pair of RAM units; and a connection unit thatcommunicatively connects the logic chip and each of the pair of RAMunits, in which one RAM unit is placed on the first interposer and hasone end portion disposed so as to overlap one end portion of the logicchip with the connection unit therebetween in a lamination direction,and in which the other RAM unit is disposed so as to overlap the one RAMunit with the connection unit therebetween and is disposed along atleast one side of the outer periphery of the logic chip.

In addition, it is preferable that each of the pair of RAM units includea memory unit in which memory circuits are laminated, and an interfacechip laminated on one end side of the memory unit.

In addition, it is preferable that each of the pair of RAM units bedisposed with the interface chips facing each other.

In addition, it is preferable that, in each of the pair of RAM units,the interface chip be disposed on a surface opposite to a surface facingthe first interposer.

In addition, it is preferable that the other RAM unit be configured toinclude only the memory unit.

In addition, it is preferable that the semiconductor module furtherinclude a second interposer placed on the other RAM unit, a thirdinterposer or a package substrate on which the first interposer isplaced, and a bonding wire that electrically connects the secondinterposer and the third interposer or the package substrate.

In addition, it is preferable that the semiconductor module furtherinclude a second interposer placed on the other RAM unit and a columnarmember that electrically connects the first interposer and the secondinterposer.

In addition, it is preferable that the semiconductor module furtherinclude a heat sink unit placed on the other RAM unit and the logicchip.

In addition, it is preferable that the heat sink unit include a spacermember adjacent to at least one of the other RAM unit and the logicchip.

In addition, it is preferable that each of the pair of RAM units includea lamination-type RAM module having the same shape and size in planview.

Effects of the Invention

According to the invention, it is possible to provide a semiconductormodule capable of improving a bandwidth between a logic chip and a RAM.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view illustrating a semiconductor moduleaccording to a first embodiment of the invention.

FIG. 2 is a cross-sectional view illustrating a lamination-type RAMmodule of the semiconductor module according to the first embodiment.

FIG. 3 is a cross-sectional view taken along line A-A of FIG. 1.

FIG. 4 is a cross-sectional view of the semiconductor module accordingto the first embodiment in which a heat sink unit is placed.

FIG. 5 is a conceptual diagram illustrating a flow of power supply anddata communication in the semiconductor module according to the firstembodiment.

FIG. 6 is a cross-sectional view illustrating a semiconductor moduleaccording to a second embodiment of the invention.

FIG. 7 is a conceptual diagram illustrating a flow of power supply anddata communication in the semiconductor module according to the secondembodiment.

FIG. 8 is a cross-sectional view illustrating a semiconductor moduleaccording to a third embodiment of the invention.

FIG. 9 is a conceptual diagram illustrating a flow of power supply anddata communication in the semiconductor module according to the thirdembodiment.

FIG. 10 is a schematic plan view illustrating a semiconductor moduleaccording to a fourth embodiment of the invention.

FIG. 11 is a cross-sectional view taken along line B-B of FIG. 10.

FIG. 12 is a partially enlarged view of a RAM unit of FIG. 11.

FIG. 13 is a conceptual diagram illustrating a flow of power supply anddata communication in the semiconductor module according to the fourthembodiment.

FIG. 14 is a cross-sectional view illustrating a semiconductor moduleaccording to a fifth embodiment of the invention.

PREFERRED MODE FOR CARRYING OUT THE INVENTION

Hereinafter, semiconductor modules according to embodiments of theinvention will be described with reference to the drawings. Thesemiconductor module according to each embodiment is, for example, asystem in a package (SIP) in which arithmetic units (hereinafterreferred to as logic chips) and lamination-type RAMS are disposed on aninterposer. The semiconductor module is disposed on a differentinterposer and is electrically connected by using micro bumps. Thesemiconductor module is a device that can obtain power from differentinterposers and can transmit and receive data to and from differentinterposers. In addition, in each of the following embodiments, an MPUwill be described as an example of the logic chip.

First Embodiment

Next, a semiconductor module 1 according to a first embodiment of theinvention will be described with reference to FIGS. 1 to 5. Thesemiconductor module 1 includes a first interposer 10, an MPU 20, a pairof RAM units 30, a connection unit 40, and a heat sink unit 50 asillustrated in FIGS. 1 to 4.

As illustrated in FIGS. 1 and 3, the first interposer 10 is a plate-likebody having a rectangular shape in plan view, and an electric circuit isformed therein. The first interposer 10 is electrically connected to theMPU 20 and the pair of RAM units 30 to be described later. The firstinterposer 10 is disposed on a different interposer or a packagesubstrate (not illustrated), and one surface (lower surface) thereof iselectrically connected to the different interposer or the packagesubstrate by using, for example, micro bumps M1. In addition, in thefollowing, a thickness direction of the first interposer will bedescribed as a lamination direction C. In addition, in the laminationdirection C, the direction from the first interposer 10 toward thedifferent interposer or the package substrate is described as downward.In addition, in the lamination direction C, the direction opposite tothe downward is described as upward.

The MPU 20 is a plate-like body having a rectangular shape in plan view.As illustrated in FIG. 3, in the MPU 20, a circuit surface 21 thatfunctions as a power supply terminal, a communication terminal, and aground terminal is disposed on the lower surface side. The circuitsurface 21 of the MPU 20 is electrically connected to the firstinterposer 10 via pillars P (for example, Cu pillars) configured on theupper surface of the first interposer 10.

Each of the pair of RAM units 30 is configured to include alamination-type RAM module having a rectangular shape in plan view. Forexample, each of the pair of RAM units 30 is configured to include alamination-type DRAM module. As illustrated in FIG. 1, the pair of RAMunits 30 are disposed on the upper surface of the first interposer 10and, although not particularly limited, may be disposed so as tosurround the MPU 20. In the embodiment, although not particularlylimited, eight pairs of RAM units 30 may be disposed, and two pairs ofthe RAM units 30 may be disposed for each side of the MPU 20. Each ofthe pair of RAM units 30 includes a lamination-type RAM module havingthe same shape and size in plan view. For example, each of the pair ofRAM units 30 can be manufactured in the same lot.

The one of the pair of RAM units 30 (hereinafter referred to as the oneRAM unit 30 a) is placed on the first interposer 10 as illustrated inFIG. 3. In addition, one end portion of the one RAM unit 30 a isdisposed so as to overlap one end portion of the MPU 20 in thelamination direction C with the later-described connection unit 40therebetween. Specifically, one end portion of the one RAM unit 30 a isdisposed so as to be interposed between the one end portion of the MPU20 and the first interposer 10. By disposing a plurality of the one RAMunits 30 a on the first interposer 10, a rectangular region surroundedby the plurality of the one RAM units 30 a is formed. The rectangularregion formed by the one RAM unit 30 a is formed to have an area smallerthan the area of the lower surface of the MPU 20. The lower surfacefacing the upper surface of the first interposer 10 of the one RAM unit30 a is electrically connected to the first interposer 10 by using microbumps M2.

As illustrated in FIGS. 1 and 3, the other of the pair of RAM units 30(hereinafter referred to as the other RAM unit 30 b) overlaps the oneRAM unit 30 a with the later-described connection unit 40 therebetween.In addition, the other RAM unit 30 b is disposed along the outerperiphery of the MPU 20. That is, the other RAM unit 30 b is disposedadjacent to the MPU 20, and one end surface (one side surface)perpendicular to the lamination direction C is disposed to face one sidesurface of the MPU 20.

By disposing a plurality of the other RAM units 30 b on the one RAM unit30 a, a rectangular region surrounded by a plurality of the other RAMunits 30 b is formed. The rectangular region formed by the other RAMunit 30 b is formed to have an area equal to or larger than the area ofthe lower surface of the MPU 20. That is, the other RAM unit 30 boverlaps the one RAM unit 30 a in a state shifted by the overlappingwidth L (the intrusion length of the one end portion of the one RAM unit30 a interposed between the first interposer 10 and the MPU 20) or moreof the one RAM unit 30 a overlapping the MPU 20. Accordingly, the otherRAM unit 30 b is disposed so as to protrude by an overlapping width L ormore from the other end edge on the side opposite to the one end portionof the one RAM unit 30 a.

Each of the pair of RAM units 30 includes a memory unit 31 and aninterface chip 32 as illustrated in FIG. 2. In the embodiment, in eachof the pair of RAM units 30, the later-described interface chip 32 isdisposed on a surface (upper surface) opposite to a surface (lowersurface) facing the first interposer 10. That is, the later-describedinterface chip 32 of the one RAM unit 30 a is disposed to face thecircuit surface 21 of the MPU 20 with the later-described connectionunit 40 therebetween. In addition, the later-described interface chip 32of the other RAM unit 30 b is disposed on a surface (upper surface)opposite to a surface (lower surface) facing the connection unit 40 tobe described later.

The memory unit 31 is formed in a plate-like body having a rectangularshape in plan view and is formed by laminating memory circuits 33 a.Specifically, the memory unit 31 is formed by laminating dies 33 b,which are plate-like bodies having a rectangular shape in plan view,having the memory circuits 33 a on the upper surface in the laminationdirection C. The die 33 b is an Si substrate in which a circuit isformed, and each of the laminated dies 33 b is electrically connected tothe adjacent die 33 b. A power supply terminal and a ground terminalthat connect the laminated dies 33 b are formed by, for example,bumpless TSV, and a signal line is formed by ThruChip interface (TCI).

The interface chip 32 is formed in a plate-like body having arectangular shape in plan view. The interface chip 32 is laminated onone end side (upper surface side) of the memory unit 31. Specifically,the interface chip 32 is laminated on the memory circuit 33 a of the die33 b laminated at the uppermost position in the lamination direction C.A communication circuit 32 a for communication is formed on the uppersurface of the interface chip 32. The power supply terminal and theground terminal that connect the interface chip 32 and the memory unit31 are formed by, for example, bumpless TSV, and the signal line isformed by TCI.

The connection unit 40 is a communication interface that connects theMPU 20 and each of the pair of RAM units and is formed in, for example,a layered shape. The connection unit 40 communicatively connects the MPU20 and the pair of RAM units 30. That is, the MPU 20 and the pair of RAMunits 30 are communicatively connected to each other. The connectionunit 40 is disposed on the surface (upper surface) opposite to thesurface (lower surface) placed on the first interposer 10 among thesurfaces of the one RAM unit 30 a. That is, the connection unit 40 isdisposed with the one portion thereof interposed between the pair of RAMunits 30 and with the other portion thereof interposed between the oneRAM unit 30 a and the MPU 20. The connection unit 40 is, for example, ananisotropic conductive film (ACF) and functions as a power supplyterminal and a signal line.

As illustrated in FIG. 4, the heat sink unit 50 is placed on the otherRAM unit 30 b and the MPU 20. That is, the heat sink unit 50 is disposedacross the other RAM unit 30 b and the MPU 20. In the embodiment, theheat sink unit 50 is disposed so as to cover the upper surface (thesurface opposite to the surface facing the first interposer 10) of theother RAM unit 30 b and the MPU 20. A paste or adhesive having a highthermal conductivity or other plate-like substance may be interposedbetween the heat sink unit 50, the other RAM unit 30 b, and the MPU 20.

Next, operations of the semiconductor module 1 will be described. First,as illustrated in FIG. 5, a power W1 is supplied from the firstinterposer 10 to the MPU 20. In addition, a power W2 is supplied fromthe first interposer 10 to the one RAM unit 30 a. The power W2 suppliedto the one RAM unit 30 a is also supplied to the other RAM unit 30 bwith the connection unit 40 therebetween. The MPU 20 is ground-connected(ground G1) to the first interposer 10. The pair of RAM units 30 areground-connected (ground G2) to the first interposer 10. A power W4 anda ground G4 may be supplied from the interface chip 32 to the MPU 20with the connection unit 40 therebetween.

In a case where a data is stored in the pair of RAM units 30, first, adata D1 is transmitted from the first interposer 10 to the MPU 20. TheMPU 20 transmits a calculation result calculated on the basis of thedata D1 to the pair of RAM units 30 as a store signal (data D2). Thatis, the store signal transmitted from the MPU 20 is transmitted throughthe circuit surface 21 and the connection unit 40 of the MPU 20 to theinterface chip 32 of the one RAM unit 30 a.

The interface chip 32 stores the data included in the store signal inthe memory unit 31 on the basis of the address included in the storesignal (data D3). At this time, the interface chip 32 also controls theother RAM unit 30 b. That is, in a case where the address included inthe store signal is included in the other RAM unit 30 b, the interfacechip 32 stores the data included in the store signal at thecorresponding address in the other RAM unit 30 b.

On the other hand, in a case where a data is loaded from the pair of RAMunits 30, first, a load signal is transmitted from the first interposer10 to the MPU 20 (data D6). That is, the load signal transmitted fromthe MPU 20 is transmitted through the circuit surface 21 and theconnection unit 40 of the MPU 20 to the interface chip 32 of the one RAMunit 30 a.

The interface chip 32 loads the data from the corresponding address inthe memory unit 31 on the basis of the address included in the loadsignal (data D5). At this time, the interface chip 32 also controls theother RAM unit 30 b. That is, in a case where the address included inthe load signal is included in the other RAM unit 30 b, the interfacechip 32 loads the data from the corresponding address in the other RAMunit 30 b. The interface chip 32 transmits the loaded data to the MPU 20with the connection unit 40 therebetween (data D4).

The semiconductor module 1 according to the first embodiment asdescribed above has the following effects.

(1) The semiconductor module 1 is configured to include the MPU 20(logic chip), a pair of the RAM units 30 each of which is configuredwith the lamination-type RAM module, and the first interposer 10 whichis electrically connected to the MPU 20 and each of the pair of RAMunits 30, and the connection unit 40 which communicatively connects theMPU 20 and each of the pair of RAM units 30. Then, the one end portionof one of the pair of RAM units 30 is disposed so as to overlap the oneend portion of the MPU 20 in the lamination direction C with theconnection unit 40 therebetween, and the other of the pair of RAM units30 is disposed so as to overlap the one RAM unit 30 a with theconnection unit 40 therebetween and is disposed along at least one sideof the outer periphery of the MPU 20. Accordingly, since the MPU 20 andeach of the pair of RAM units 30 can be directly connected to each otherby the connection unit 40, the signal line between the MPU 20 and eachof the pair of RAM units 30 can be shortened. Therefore, the bandwidthbetween the MPU 20 and the pair of RAM units 30 can be widened. Inaddition, the capacity of the RAM units 30 can be easily increased byconfiguring a pair of the RAM units 30 with a lamination-type RAMmodule. Furthermore, the lamination-type RAM module can be manufacturedseparately, and thus, the yield can be improved as compared with a casewhere the RAM unit 30 is manufactured with a single lamination-type RAMmodule.

(2) Each of the pair of RAM units 30 is configured to include the memoryunit 31 in which the memory circuits 33 a are laminated and theinterface chip 32 which is laminated on the one end side of the memoryunit 31. Accordingly, the memory unit 31 can be controlled by using theinterface chip 32. Therefore, the memory unit 31 can be appropriatelycontrolled.

(3) In each of the pair of RAM units 30, the interface chip 32 isdisposed on the surface side opposite to the surface facing the firstinterposer 10. Accordingly, since the disposition can be performedwithout changing the direction of the lamination direction of the RAMunits 30, the ease of manufacturing improves.

(4) The semiconductor module 1 is further configured to include the heatsink unit 50 placed on the other RAM unit 30 b and the MPU 20.Accordingly, efficient heat dissipation can be performed from both theRAM unit 30 and the MPU 20.

(5) Each of the pair of RAM units 30 is configured to include thelamination-type RAM module having the same shape and size in plan view.Accordingly, since it is not necessary to manufacture thelamination-type RAM module corresponding to each of the pair of RAMunits 30 according to individual standards, the manufacturing cost canbe reduced.

(6) The power W4 and the ground G4 are supplied from the interface chip32 to the MPU 20 with the connection unit 40 therebetween. Accordingly,a common power can be supplied to the drive circuit that drives thesignal line between the interface chip 32 and the MPU 20, and thus,malfunction due to a phase shift of power source noise can beeffectively suppressed.

Second Embodiment

Next, a semiconductor module 1A according to a second embodiment of theinvention will be described with reference to FIGS. 6 and 7. In thedescription of the second embodiment, the same components are denoted bythe same reference numerals, and the description thereof is omitted orsimplified. As illustrated in FIG. 6, the semiconductor module 1Aaccording to the second embodiment is different from the firstembodiment in that each of the pair of RAM units 30 is disposed with theinterface chips 32 facing each other. As illustrated in FIG. 7, thesemiconductor module 1A according to the second embodiment is differentfrom the first embodiment in that each of the interface chip 32 of theone RAM unit 30 a and the interface chip 32 of the other RAM unit 30 bmanages the memory unit 31 of each RAM unit 30.

The semiconductor module 1A according to the second embodiment asdescribed above has the following effects.

(7) Each of the pair of RAM units 30 is disposed with the interfacechips 32 facing each other. Accordingly, each of the pair of RAM units30 can be controlled by separate interface chips 32.

Third Embodiment

Next, a semiconductor module 1B according to a third embodiment of theinvention will be described with reference to FIGS. 8 and 9. In thedescription of the third embodiment, the same components are denoted bythe same reference numerals, and the description thereof is omitted orsimplified. As illustrated in FIG. 8, the semiconductor module 1Baccording to the third embodiment is different from the first and secondembodiments in that the other RAM unit 30 b is configured to includeonly the memory unit 31. In the semiconductor module 1B according to thethird embodiment, as illustrated in FIG. 9, the interface chip 32 of theone RAM unit 30 a manages both the RAM units in the pair of RAM units 30similarly to the first embodiment.

The semiconductor module 1B according to the third embodiment asdescribed above has the following effects.

(8) The other RAM unit 30 b is configured to include only the memoryunit 31. Accordingly, the yield of the semiconductor module 1B can beimproved and the manufacturing cost can be reduced.

Fourth Embodiment

Next, a semiconductor module 1C according to a fourth embodiment of theinvention will be described with reference to FIGS. 10 to 13. In thedescription of the fourth embodiment, the same components are denoted bythe same reference numerals, and the description thereof is omitted orsimplified. As illustrated in FIGS. 10 to 12, the semiconductor module1C according to the fourth embodiment is different from the secondembodiment in that the semiconductor module 1C includes a secondinterposer 60, a third interposer or a package substrate 80, and abonding wire 70.

The second interposer 60 is formed to have a rectangular shape in planview. For example, the second interposer 60 is placed on the other RAMunit 30 b and is electrically connected to the other RAM unit 30 b byusing micro bumps M3. In the embodiment, the second interposer 60 isformed to have substantially the same shape and size as the other RAMunit 30 b in plan view. The first interposer 10 is placed on the thirdinterposer or the package substrate 80. The third interposer or packagesubstrate 80 is electrically connected to the first interposer 10 byusing the micro bumps M1.

The bonding wire 70 is disposed so as to supply a power W3 and a groundG3 to the other RAM unit 30 b. One end of the bonding wire 70 isconnected to the third interposer or the package substrate 80 by using abonding pad or the like, and the other end thereof is connected to thesecond interposer 60 by using a bonding pad or the like.

Next, operations of the semiconductor module 1C will be described. Asillustrated in FIG. 13, the second interposer 60 is supplied with thepower W3 from the third interposer or the package substrate 80 via thebonding wires 70. The other RAM unit 30 b is supplied with the power W3from the second interposer 60. The other RAM unit 30 b isground-connected (ground G3) to the second interposer 60.

The semiconductor module 1C according to the fourth embodiment asdescribed above has the following effects.

(9) The semiconductor module 1C is configured to further include thesecond interposer 60 placed on the other RAM unit 30 b, the thirdinterposer or package substrate 80 on which the first interposer 10 isplaced, and the bonding wire 70 that electrically connects the secondinterposer 60 and the third interposer or the package substrate 80.Accordingly, power can be separately supplied to each of the pair of RAMunits 30, so that it is possible to stably supply power to the RAM unit30.

Fifth Embodiment

Next, a semiconductor module 1D according to a fifth embodiment of theinvention will be described with reference to FIG. 14. In thedescription of the fifth embodiment, the same components are denoted bythe same reference numerals, and the description thereof is omitted orsimplified. The semiconductor module 1D according to the fifthembodiment is different from the fourth embodiment in that a conductivecolumnar member 90 is provided instead of the bonding wire 70 asillustrated in FIG. 14.

The columnar member 90 is, for example, a Cu pillar and is disposed soas to supply a power W5 and a ground G5 to the other RAM unit 30 b. Oneend of the columnar member is connected to the upper surface of thefirst interposer 10, and the other end thereof is connected to the lowersurface of the second interposer 60. A plurality of columnar members 90are disposed along the side of the position that is farthest from theMPU 20, among the four sides of the lower surface of the secondinterposer 60. In other words, a plurality of the columnar members 90are disposed along the farther side of the two sides disposed along theouter periphery of the MPU 20 on the lower surface of the secondinterposer 60. In the embodiment, six columnar members 90 are disposedfor each pair of RAM units 30 (second interposer 60).

Next, operations of the semiconductor module 1D will be described. Asillustrated in FIG. 14, the second interposer 60 is supplied with powerW5 from the first interposer 10 via the columnar member 90. The secondinterposer 60 is ground-connected (ground G5) to the first interposer10.

The semiconductor module 1D according to the fifth embodiment asdescribed above has the following effects.

(10) The semiconductor module 1D is configured to further include thesecond interposer 60 placed on the other RAM unit 30 b, and the columnarmember 90 that electrically connects the first interposer 10 and thesecond interposer 60. Accordingly, power can be separately supplied toeach of the pair of RAM units 30, so that it is possible to stablysupply power to the RAM units 30. In addition, since the other end ofthe columnar member 90 is connected to the lower surface of the secondinterposer 60 facing the other RAM unit 30 b, both the connectionposition of the columnar member 90 and the connection position of theother RAM unit 30 b can be disposed to the lower surface side of thesecond interposer 60. Accordingly, since the power (power W3 and powerW5) and the ground (ground G3 and ground G5) can be supplied from thecolumnar member 90 to the other RAM unit 30 b without penetrating thesecond interposer 60, it is possible to reduce the manufacturing cost ofthe semiconductor module 1D.

Sixth Embodiment

Next, a semiconductor module according to the sixth embodiment of theinvention will be described. In the description of the sixth embodiment,the same components are denoted by the same reference numerals, and thedescription thereof is omitted or simplified. The semiconductor moduleaccording to the sixth embodiment is different from the first to fifthembodiments in that the heat sink unit 50 includes a spacer member (notillustrated). In a case where there is a step difference between theupper surface of the MPU 20 and the upper surface of the other RAM unit30 b, the spacer member is formed with a thickness that buries the stepdifference. The spacer member is adjacent to at least one of the otherRAM unit 30 b and the MPU 20. The spacer member is formed with a facingsurface being a flat so as to be in contact with the upper surface ofthe other RAM unit 30 b or the MPU 20.

The semiconductor module according to the sixth embodiment as describedabove has the following effects.

(11) The heat sink unit is configured to include at least a spacermember adjacent to one of the other RAM unit 30 b and the MPU 20.Accordingly, even in a case where there is no surface between the RAMunit and the MPU 20, the heat sink unit can be installed.

While the preferred embodiments of the semiconductor module according tothe invention have been described above, the invention is not limited tothe above-described embodiments and can be modified as appropriate.

For example, in the above-described embodiment, the power supplyterminal and the ground terminal that connect the laminated dies 33 bare formed by bumpless TSV, and the signal line is formed by TCI. Inaddition, the combination of the power supply terminal and the groundterminal that connect the interface chip 32 and the memory unit 31 isformed by bumpless TSV, and the signal line is formed by TCI. However,the invention is not limited thereto. For example, the combinationsillustrated in Table 1 below can be used.

TABLE 1 Power supply terminal in Signal line in lamination laminationdirection of RAM unit direction of RAM unit 1 Bumpless TSV TCI 2Bumpless TSV TSV + Hybrid Bonding 3 Bumpless TSV Bumpless TSV 4 TSV +Hybrid Bonding TCI 5 TSV + Hybrid Bonding TSV + Hybrid Bonding 6 TSV +Hybrid Bonding Bumpless TSV 7 ACF TCI 8 ACF ACF

In addition, TCI is an abbreviation for ThruChip Interface.

In addition, in the above-described embodiment, the connection unit 40is an ACF, but the invention is not limited thereto. For example, theconnection unit 40 can be configured as illustrated in Table 2 below.

TABLE 2 Power supply Signal line Power supply Signal line between RAMbetween RAM between MPU and between MPU and units units RAM unit RAMunit 1 ACF ACF ACF ACF 2 ACF TCI ACF TCI 3 Hybrid Bonding Hybrid BondingHybrid Bonding Hybrid Bonding 4 Hybrid Bonding TCI Hybrid Bonding TCI 5Micro bump Micro bump Micro bump Micro bump 6 Micro bump TCI Micro bumpTCI

In the fourth embodiment, the heat sink unit 50 may be formed to have asize that does not overlap the connection portion between the bondingwire 70 and the second interposer 60. As another modified example, theheat sink unit 50 may have a spacer member having a height larger thanthe height of the bonding wire 70 from the second interposer 60 andhaving a size that does not overlap the connection portion between thebonding wire 70 and the second interposer 60.

In the above-described embodiment, the power W1 and the power W2 aresupplied from the first interposer 10 to the MPU 20 and the pair of RAMunits 30, but the invention is not limited thereto. For example, asillustrated in FIG. 5, the power W4 and the ground G4 may be suppliedfrom the MPU 20, and on the contrary, the power W4 and the ground G4 maybe supplied from the pair of RAM units 30.

In addition, the arithmetic unit is not limited to the MPU and may bewidely applied to all logic chips. The memory is not limited to the DRAMand may be applied to all random access memories (RAMS) including a widerange of non-volatile RAMS (for example, MRAMs, ReRAMs, FeRAMs, and thelike).

EXPLANATION OF REFERENCE NUMERALS

-   1, 1A, 1B, 1C, 1D SEMICONDUCTOR MODULE-   10 FIRST INTERPOSER-   20 MPU-   30 PAIR OF RAM UNITS-   30 a ONE RAM UNIT-   30 b OTHER RAM UNIT-   31 MEMORY UNIT-   32 INTERFACE CHIP-   40 CONNECTION UNIT-   50 HEAT SINK UNIT-   60 SECOND INTERPOSER-   70 BONDING WIRE-   80 THIRD INTERPOSER OR PACKAGE SUBSTRATE

1. A semiconductor module comprising: a logic chip; a pair of RAM units,each of which is configured with a lamination-type RAM module; a firstinterposer electrically connected to the logic chip and each of the pairof RAM units; and a connection unit that communicatively connects thelogic chip and each of the pair of RAM units, wherein one RAM unit isplaced on the first interposer and has one end portion disposed so as tooverlap one end portion of the logic chip with the connection unittherebetween in a lamination direction, and the other RAM unit isdisposed so as to overlap the one RAM unit with the connection unittherebetween and is disposed along at least one side of an outerperiphery of the logic chip.
 2. The semiconductor module according toclaim 1, wherein each of the pair of RAM units includes: a memory unitin which memory circuits are laminated; and an interface chip laminatedon one end side of the memory unit.
 3. The semiconductor moduleaccording to claim 2, wherein each of the pair of RAM units is disposedwith the interface chips facing each other.
 4. The semiconductor moduleaccording to claim 2, wherein, in each of the pair of RAM units, theinterface chip is disposed on a surface opposite to a surface facing thefirst interposer.
 5. The semiconductor module according to claim 2,wherein the other RAM unit is configured to include only the memoryunit.
 6. The semiconductor module according to claim 1, furthercomprising: a second interposer placed on the other RAM unit; a thirdinterposer or a package substrate on which the first interposer isplaced; and a bonding wire that electrically connects the secondinterposer and the third interposer or the package substrate.
 7. Thesemiconductor module according to claim 1, further comprising: a secondinterposer placed in the other RAM unit; and a columnar member thatelectrically connects the first interposer and the second interposer. 8.The semiconductor module according to claim 1, further comprising a heatsink unit placed on the other RAM unit and the logic chip.
 9. Thesemiconductor module according to claim 8, wherein the heat sink unitincludes a spacer member adjacent to at least one of the other RAM unitand the logic chip.
 10. The semiconductor module according to claim 1,wherein each of the pair of RAM units includes a lamination-type RAMmodule having the same shape and size in plan view.